ScientificReports - Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition

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Twostep mixed atmosphere annealing was developed to enhance the stability of the nitrogen-doped ITO (ITON) thin films at high temperatures. The ITON thin films were first annealed in nitrogen and then were subjected to the second-step annealing in the air (N 2-air) and vacuum (N 2-vacuum) environment at 1000 °C, respectively.Results show that stable microstructures and chemical states can be
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SnO2 In2O3, and Sn-doped In2O3 (ITO)/polymer and the corresponding carbon composite hollow colloids are template synthesized. It is essential that the sulfonated gel shell of the cross-linked polystyrene hollow colloid can favorably induce adsorption of target precursors. After being calcined in air to remove the template, SnO2, In2O3, and ITO hollow colloids are obtained. Because the cross

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Thinfilms of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass .
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